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US 10,373,675 B2Granted
Semiconductor storage device
AssigneeRenesas Electronics Corporation
InventorsYoshisato Yokoyama, Yuichiro Ishii
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Abstract
A semiconductor storage device includes, a memory array, a plurality of memory cells provided in rows and columns, and a control circuit for controlling the memory array, each of the memory cells being a static-type memory cell comprising driving transistors, transfer transistors, and load elements.
Claims9
A semiconductor storage device, comprising:
- a memory array comprised of a plurality of memory cells provided in rows and columns, each of the plurality of memory cells being a static-type memory cell comprised of driving transistors, transfer transistors, and load elements;
- a source line coupled to source electrodes of the driving transistors;
- a first switching transistor having a first source supplied with a first voltage and a first drain coupled to the source line;
- a second switching transistor having a second source supplied with the first voltage and a second drain coupled to the source line;
- a first driver supplied with the first voltage and a second voltage, and driving a first gate of the first switching transistor according to a first control signal;
- and
- a second driver supplied with the first voltage and coupled to the source line, and driving a second gate of the second switching transistor according to the first control signal,
- wherein the first switching transistor is arranged at one side of the memory array, and
- wherein the second switching transistor is arranged at the other side of the memory array opposite to the one side of the memory array.
6 more elements
Dependencies are inferred from the claim text.