Stacked semiconductor device and system including the same

A system comprising:

• a base substrate;
• a plurality of semiconductor dies stacked on the base substrate in a vertical direction;
• a first signal path and a second signal path electrically connecting the plurality of semiconductor dies, each of the first signal path and the second signal path including at least one through-substrate via (TSV);
• a transmitter configured to generate a first driving signal and a second driving signal based on a transmission signal, the transmission signal including at least one first pulse having a pulse width such that, when the first driving signal and the second driving signal are attenuated through the first signal path to generate a first attenuated signal and the second signal path to generate a second attenuated signal, respectively, each of the first attenuated signal and the second attenuated signal have a rising time and a falling time longer than the pulse width of the first pulse included in the transmission signal received by the transmitter while the first attenuated signal and the second attenuated signal swing between a first supply voltage and a second supply voltage, and to output the first driving signal and the second driving signal to the first signal path and the second signal path, respectively;
• and
• a receiver configured to,
• receive the first attenuated signal via the first signal path and receive the second attenuated signal via the second signal path, the first attenuated signal being based on the first driving signal and the second attenuated signal being based on the second driving signal, and
• generate a reception signal corresponding to the transmission signal such that the reception signal includes a second pulse with the pulse width thereof equal to the pulse width of the first pulse and less than the rising time and the falling time of each of the first attenuated signal and the second attenuated signal.

A stacked semiconductor device comprising:

• a first semiconductor die including a first transceiver, the first transceiver configured to transmit a first driving signal and a second driving signal to a first through-substrate via (TSV) and a second TSV, respectively, the first driving signal and the second driving signal being based on a transmission signal, the transmission signal including at least one first pulse having a pulse width such that, when the first driving signal and the second driving signal are attenuated through the first TSV and the second TSV to generate attenuated versions thereof, the attenuated versions of the first driving signal and the second driving signal have rising and falling times longer than the pulse width of the first pulse included in the transmission signal received by the first transceiver while the attenuated versions of the first driving signal and the second driving signal swing between a first supply voltage and a second supply voltage;
• and
• a second semiconductor die connected to the first semiconductor die via the first TSV and the second TSV, the second semiconductor die including a second transceiver, the second transceiver configured to,
• receive the attenuated versions of the first driving signal and the second driving signal via the first TSV and the second TSV, respectively, and to
• generate a reception signal based on the attenuated versions of the first driving signal and the second driving signal such that a duty cycle of the reception signal generated by the second transceiver is same as a duty cycle of the transmission signal received by the first transceiver such that the reception signal includes a second pulse with the pulse width thereof equal to the pulse width of the first pulse and less than the rising and falling times of the attenuated versions of the first driving signal and the second driving signal.