US 10,373,550 B2Granted

Light emitting device and method of driving the light emitting device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsMitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki

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Abstract

A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Claims18

Dependent claims

A light emitting device comprising:

a first transistor, wherein a gate of the first transistor is electrically connected to a first gate signal line, and one of a source and a drain of the first transistor is electrically connected to a source signal line;
a second transistor, wherein a gate of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and one of a source and a drain of the second transistor is electrically connected to a first wiring;
a third transistor, wherein a gate of the third transistor is electrically connected to a second gate signal line, one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the second transistor;
a fourth transistor, wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor, and the other of the source and the drain of the fourth transistor is electrically connected to a second wiring;
and
a light emitting element, wherein a first electrode of the light emitting element is electrically connected to the other of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor,
wherein the source signal line and the first wiring extend in a first direction,
wherein each of the first gate signal line and the second gate signal line intersects with the source signal line and the first wiring, and
wherein at least the first transistor and the fourth transistor are n-channel transistors.

6 more elements

A light emitting device comprising:

a first transistor, wherein a gate of the first transistor is electrically connected to a first gate signal line, and one of a source and a drain of the first transistor is electrically connected to a source signal line;
a second transistor, wherein a gate of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and one of a source and a drain of the second transistor is electrically connected to a first wiring;
a third transistor, wherein a gate of the third transistor is electrically connected to a second gate signal line, one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the second transistor;
a fourth transistor, wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor, and the other of the source and the drain of the fourth transistor is electrically connected to a second wiring;
a light emitting element, wherein a first electrode of the light emitting element is electrically connected to the other of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor;
and
a capacitor, wherein a first electrode of the capacitor is electrically connected to the other of the source and the drain of the third transistor, the one of the source and the drain of the fourth transistor, and the first electrode of the light emitting element,
wherein the source signal line and the first wiring extend in a first direction,
wherein each of the first gate signal line and the second gate signal line intersects with the source signal line and the first wiring, and
wherein at least the first transistor and the fourth transistor are n-channel transistors.

7 more elements

A light emitting device comprising:

a first transistor, wherein a gate of the first transistor is electrically connected to a first gate signal line, and one of a source and a drain of the first transistor is electrically connected to a source signal line;
a second transistor, wherein a gate of the second transistor is electrically connected to the other of the source and the drain of the first transistor, and one of a source and a drain of the second transistor is electrically connected to a first wiring;
a third transistor, wherein a gate of the third transistor is electrically connected to a second gate signal line, one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the second transistor;
a fourth transistor, wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the third transistor, and the other of the source and the drain of the fourth transistor is electrically connected to a second wiring;
and
a light emitting element, wherein a pixel electrode of the light emitting element is electrically connected to the other of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor,
wherein the source signal line and the first wiring extend in a first direction,
wherein the first gate signal line and the second gate signal line extend in a second direction perpendicular to the first direction, and
wherein at least the first transistor and the fourth transistor are n-channel transistors.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/027,892Filed 5 Jul 2018 · continuation
Priority: JP 2002-05488628 Feb 2002
Published: US 2018/0315370 A11 Nov 2018
Granted: 6 Aug 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification19 codes

G09G 3/32
Using electroluminescent panels: semiconductive, e.g. using light-emitting diodes [LED]
G09G 3/3233
Using an active matrix: with pixel circuitry controlling the current through the light-emitting element
G09G 3/3258
Using an active matrix: with pixel circuitry controlling the voltage across the light-emitting element
G09G 3/3266
Organic, e.g. using organic light-emitting diodes [OLED]: details of drivers for scan electrodes

Family

Application10/373,772Parent of this continuation · filed 25 Feb 2003
Application11/701,346Parent of this continuation · filed 1 Feb 2007
US 7,176,857 B2Parent of this continuation · filed 13 Feb 2007
Application12/243,637Parent of this continuation · filed 1 Oct 2008
US 7,450,093 B2Parent of this continuation · filed 11 Nov 2008
Application13/531,822Parent of this continuation · filed 25 Jun 2012
US 8,207,916 B2Parent of this continuation · filed 26 Jun 2012
Application13/675,399Parent of this continuation · filed 13 Nov 2012
US 8,330,681 B2Parent of this continuation · filed 11 Dec 2012
Application14/186,600Parent of this continuation · filed 21 Feb 2014
US 8,659,517 B2Parent of this continuation · filed 25 Feb 2014
Application14/662,775Parent of this continuation · filed 19 Mar 2015
US 8,988,324 B2Parent of this continuation · filed 24 Mar 2015
Application15/271,578Parent of this continuation · filed 21 Sep 2016
US 9,454,933 B2Parent of this continuation · filed 27 Sep 2016
Application15/637,075Parent of this continuation · filed 29 Jun 2017
US 9,697,772 B2Parent of this continuation · filed 4 Jul 2017
US 2018/0315370 A1Pre-grant publication · published 1 Nov 2018
US 10,019,935 B2Parent of this continuation
US 2003/0160745 A1Published application
US 2007/0152925 A1Published application
US 2009/0033600 A1Published application
US 2012/0261665 A1Published application
US 2013/0126912 A1Published application
US 2014/0168196 A1Published application
US 2015/0194095 A1Published application
US 2017/0011686 A1Published application
US 2017/0301285 A1Published application
US 10,373,550 B2This patent

From the US filing history. Foreign family members aren’t listed.

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