Method and device for permanently repairing defects of absent material of a photolithographic mask

A method for repairing defects of absent material of a photolithographic mask, the method comprising:

• a. providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask, in which the at least one oxidizing agent comprises at least one of H2O2 or HNO3, in which the at least one carbon-containing precursor gas comprises a mixture of at least one metal carbonyl and at least one main group element alkoxide at the location to be repaired, wherein providing the at least one metal carbonyl at the location of absent material is carried out in a partial pressure range of 10−6 mbar to 10−4 mbar, providing the at least one main group element alkoxide is carried out in a partial pressure range of 10−6 mbar to 10−4 mbar, and providing the at least one oxidizing agent is carried out in a partial pressure range of 10−5 mbar to 10−2 mbar;
• b. initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas;
• and
• c. controlling a gas volumetric flow rate of the at least one oxidizing agent in order to reduce a carbon proportion of the deposited material to be less than 15 atom %.