Heat generation point detection method and heat generation point detection device

An apparatus for acquiring a depth of a heat generation point in an integrated circuit, comprising:

• an electric signal supply unit configured to supply an electric signal to the integrated circuit;
• a control unit configured to control the electric signal supply unit so as to supply a first electric signal at a first frequency and a second electric signal at a second frequency different from the first frequency, to the integrated circuit;
• a detection unit configured to acquire a first detection signal indicative of a change of an amount of heat generation detected from the integrated circuit in response to supply of the first electric signal and configured to acquire a second detection signal indicative of a change of an amount of heat generation detected from the integrated circuit in response to supply of the second electric signal;
• a phase shift detection unit configured to acquire a first phase shift between the first electric signal and the first detection signal and a second phase shift between the second electric signal and the second detection signal;
• and
• a calculation unit configured to acquire a first variable which is the square root of the first frequency and a second variable which is the square root of the second frequency and acquire depth information, x, of the heat generation point indicating the depth of the heat generation point in the integrated circuit, on the basis of a variation of the phase shift, dbx, between the first phase shift and the second phase shift, and a variation of the variable, df1/2, between the first variable and the second variable using the following equation:
• dbx
• d
• ⁢
• f
• =
• x
• ⁢
• ρ
• ⁢
• ⁢
• q
• ⁢
• ⁢
• π
• k
• ,
• wherein ρ is the density of the integrated circuit material, q is the specific heat of the integrated circuit material, and κ is the heat transfer coefficient of the integrated circuit material.

A method for acquiring a depth of a heat generation point in an integrated circuit, comprising:

• supplying a plurality of electric signals to the integrated circuit;
• acquiring a plurality of detection signals indicative of a change of an amount of heat generation detected from the integrated circuit in response to the plurality of electric signals;
• acquiring a plurality of phase shifts between one of the plurality of electric signals and one of the plurality of detection signals that corresponds to the on of the plurality electric signals and a plurality of variables which are values of the square root of the frequencies of the plurality of electric signal;
• and
• acquiring depth information, x, of the heat generation point indicating the depth of the heat generation point in the integrated circuit on the basis of a variation of a phase shift, dbx, against a first of the plurality of phase shifts and a second of the plurality of phase shifts, and a variation of the variable, df1/2, between the first of the plurality of variables and the second of the plurality of variables using the following equation:
• dbx
• d
• ⁢
• f
• =
• x
• ⁢
• ρ
• ⁢
• ⁢
• q
• ⁢
• ⁢
• π
• k
• ,
• wherein ρ is the density of the integrated circuit material, q is the specific heat of the integrated circuit material and κ is the heat transfer coefficient of the integrated circuit material.

An apparatus for acquiring a depth of a heat generation point in an integrated circuit, comprising:

• an electric signal supply configured to supply a plurality of electric signals to the integrated circuit;
• a detection unit configured to acquire a detection signal indicative of a change of an amount of heat generation detected from the integrated circuit in response each of the electric signals;
• a phase shift acquisition unit configured to acquire a phase shift between the electric signal and the detection signal and a variable which is the square root of the frequency of the electric signal;
• and
• a calculation unit configured to acquire depth information of the heat generation point, x, indicating the depth of the heat generation point in the integrated circuit, on the basis of a variation of the phase shift, dbx, between the first phase shift and the second phase shift, and a variation of the variable, df1/2, between the first variable and the second variable using the following equation:
• dbx
• d
• ⁢
• f
• =
• x
• ⁢
• ρ
• ⁢
• ⁢
• q
• ⁢
• ⁢
• π
• k
• ,
• wherein ρ is the density of the integrated circuit material, q is the specific heat of the integrated circuit material, and κ is the heat transfer coefficient of the integrated circuit material.