Gas sensor and sensor apparatus
AssigneeFujitsu Limited
InventorsSatoru Momose, Osamu Tsuboi, Kazuaki Karasawa
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Abstract
A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.
Claims9
A gas sensor, comprising:
- a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas;
- a first electrode that is a Schottky electrode to the p-type semiconductor layer;
- a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode and has resistance higher than that of each of the p-type semiconductor layer and the first electrode;
- and a second electrode that is an ohmic electrode to the p-type semiconductor layer,
- wherein the high-resistance layer has intermittent defects through which the first electrode directly contacts the p-type semiconductor layer.
A gas sensor, comprising:
- a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas;
- a first electrode that is a Schottky electrode to the p-type semiconductor layer;
- a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode;
- and
- a second electrode that is an ohmic electrode to the p-type semiconductor layer,
- wherein the first electrode and the second electrode contain a metal material having an ionization tendency lower than that of a metal element contained in the p-type semiconductor layer.
Dependencies are inferred from the claim text.