US 10,371,571 B2 · Thin film structure for micro-bolometer and method for fabricating the same

Abstract

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.

Claims15

Dependent claims

A resistor thin film for micro-bolometer, comprising:

a semiconductor substrate;
an oxide thin film with perovskite structure formed on the semiconductor substrate;
and
a vanadium dioxide (VO2) thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

15/926,366Filed 20 Mar 2018

Priority

KR 10-2017-006241119 May 2017

Published

US 2018/0335341 A122 Nov 2018

Granted

6 Aug 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

G01J 1/42
Photometry, e.g. photographic exposure meter: using electric radiation detectors
G01J 5/024
Shape of the cavity itself or of elements contained in or suspended over the cavity: special manufacturing steps or sacrificial layers or layer…
G01J 5/046
Casings: materials; Selection of thermal materials
G01J 5/20
Using electric radiation detectors: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Thin film structure for micro-bolometer and method for fabricating the same

Life of this patent

Thin film structure for micro-bolometer and method for fabricating the same

Life of this patent

Abstract

Claims15