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US 10,370,774 B2Granted
Chemical vapor deposition growth of graphene
AssigneeThe Regents of the University of California
InventorsXiangfeng Duan, Hailong Zhou
Life of this patent
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Abstract
A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar.
Claims17
A process of growing graphene, comprising:
- providing a metal substrate;
- annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas;
- and
- introducing a gas mixture to grow graphene over the metal substrate, wherein the gas mixture includes a first gas that is hydrogen, and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar,
- wherein the graphene is a single crystalline, monolayer graphene domain having a lateral size of at least 2.4 mm.
2 more elements
Dependencies are inferred from the claim text.