Sintered body made from silver fine particles
AssigneeNamics Corporation
InventorsMakoto Kobayashi, Koji Sasaki
Life of this patent
Estimating the term…
Abstract
A sintered body of silver fine particles for a bonding member to bond components of a semiconductor device, wherein an activation energy for creep of the sintered body of the silver fine particles is from 0.4 to 0.75 times that of an activation energy for a lattice diffusion of bulk silver.
Claims18
A method of manufacturing a sintered body made from silver fine particles, the sintered body being operable to be a die attach material or a bump to bond components of a semiconductor device, the method comprising:
- sintering silver fine particles having an average particle diameter of primary particles of 40 to 350 nm, a crystallite diameter of 20 to 70 nm, and a ratio of the average particle diameter to the crystallite diameter of from 1 to 5, by heating the silver fine particles at a temperature of 130 to 320° C., so that the sintered silver fine particles becomes the die attach material or the bump,
- wherein the sintered body has an activation energy for creep which is 0.4 to 0.75 times that of an activation energy for a lattice diffusion of bulk silver, and
- wherein the silver fine particles are produced by mixing a silver salt of carboxylic acid with an aliphatic primary amine, or by mixing a silver salt of carboxylic acid with an aliphatic primary amine, and adding a reductant of formic acid to precipitate the silver fine particles.
A method of manufacturing a semiconductor device having a semiconductor chip and a support bonded by a die attach material formed of a sintered body made from silver fine particles, the method comprising:
- supplying, on a support, an electrically conductive paste containing the silver fine particles having an average particle diameter of primary particles of 40 to 350 nm, a crystallite diameter of 20 to 70 nm, and a ratio of the average particle diameter to the crystallite diameter of from 1 to 5;
- placing and aligning the semiconductor chip on the support;
- and sintering the support, the electrically conductive paste, and the semiconductor chip, by heating at a temperature of 130 to 320° C., so that the electrically conductive paste becomes the die attach material formed of the sintered body,
- wherein the sintered body has an activation energy for creep which is 0.4 to 0.75 times that of an activation energy for a lattice diffusion of bulk silver, and
- wherein the silver fine particles are produced by mixing a silver salt of carboxylic acid with an aliphatic primary amine, or by mixing a silver salt of carboxylic acid with an aliphatic primary amine, and adding a reductant of formic acid to precipitate the silver fine particles.
A method of manufacturing a semiconductor device having a bump formed of a sintered body made from silver fine particles, the method comprising:
- supplying, to a semiconductor chip, an electrically conductive paste containing the silver fine particles having an average particle diameter of primary particles of 40 to 350 nm, a crystallite diameter of 20 to 70 nm, and a ratio of the average particle diameter to the crystallite diameter of from 1 to 5;
- and
- sintering the semiconductor chip, by heating at a temperature of 130 to 320° C., so that the electrically conductive paste becomes the bump of the sintered body,
- wherein an activation energy for creep of the sintered body is 0.4 to 0.75 times that of an activation energy for a lattice diffusion of bulk silver, and
- wherein the silver fine particles are produced by mixing a silver salt of carboxylic acid with an aliphatic primary amine, or by mixing a silver salt of carboxylic acid with an aliphatic primary amine, and adding a reductant of formic acid to precipitate the silver fine particles.
Dependencies are inferred from the claim text.