Manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Seiji Yasumoto, Naoto Goto, Satoru Idojiri
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Seiji Yasumoto, Naoto Goto, Satoru Idojiri
Estimating the term…
The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.
A method for manufacturing a semiconductor device, comprising the steps of:
A method for manufacturing a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.