Laser irradiation method and laser irradiation apparatus

A method for manufacturing a semiconductor device comprising:

• forming a semiconductor layer comprising amorphous silicon over a substrate;
• emitting a laser beam from a laser oscillator;
• shaping the laser beam by at least a lens array arranged in a matrix of rows and columns to form a plurality of laser beams;
• irradiating the semiconductor layer with the plurality of laser beams to crystallize the semiconductor layer;
• and
• moving the substrate relative to the plurality of laser beams during irradiation with the plurality of laser beams,
• wherein the lens array comprises a plurality of first cylindrical lenses in a first row,
• wherein the lens array comprises a plurality of second cylindrical lenses in a second row,
• wherein the plurality of first cylindrical lenses is directly connected to the plurality of second cylindrical lenses,
• wherein the first cylindrical lens in a first column is directly connected to the first cylindrical lens in a second column,
• wherein the second cylindrical lens in the first column is directly connected to the second cylindrical lens in the second column,
• wherein the first cylindrical lens in the first column is adjacent to the first cylindrical lens in the second column in a first direction,
• wherein the first cylindrical lens in the first column is adjacent to the second cylindrical lens in the first column in a second direction,
• wherein the first direction is perpendicular to the second direction,
• wherein the second direction is parallel to a direction of a generating line of the first cylindrical lens in the first column, and
• wherein the laser beam enters the lens array from a direction perpendicular to the first direction and the second direction.