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US 10,369,595 B2Granted
Structure comprising a 2-dimensional material
AssigneeInternational Business Machines Corporation
InventorPio Peter Niraj Nirmalraj
Life of this patent
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Abstract
A semiconductor structure is provided including an electrically-conducting substrate and a layer of a two-dimensional material. The structure further includes a solid organic spacer layer arranged between the electrically-conducting substrate and the layer of the two-dimensional material.
Claims8
A structure, comprising:
- an electrically-conducting substrate;
- a layer of a two-dimensional material;
- and
- a solid organic spacer layer arranged between the electrically-conducting substrate and the layer of the two-dimensional material, wherein the solid organic spacer layer is an alkane (CnH2n+2), and wherein the alkane is C14H30,
- wherein the electrically-conducting substrate has a root-mean-square surface roughness of less than 1 nanometer (nm), the organic spacer layer has a root-mean-square surface roughness of less than 2 nm, and the layer of the two-dimensional material has a root-mean-square surface roughness of less than 1 nm.
2 more elements
An electronic device including at least one structure, the at least one structure comprising:
- an electrically-conducting substrate;
- a solid organic spacer layer arranged on at least a portion of the electrically-conducting substrate and the layer of the two-dimensional material, wherein the solid organic spacer layer is a monolayer of an alkane (CnH2n+2), and wherein the alkane is C14H30;
- and
- a layer of a two-dimensional material arranged on at least a portion of the solid organic spacer layer, wherein the electrically-conducting substrate has a root-mean-square surface roughness of less than 1 nanometer (nm), the organic spacer layer has a root-mean-square surface roughness of less than 2 nm, and the layer of the two-dimensional material has a root-mean-square surface roughness of less than 1 nm.
1 more element
Dependencies are inferred from the claim text.