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US 10,345,692 B2Granted
Photomask and a fabrication method therefor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Lang Chen, Chih-Chiang Tu, Shih-Hao Yang
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Abstract
A method of fabricating a photomask includes depositing a phase shifter over a light transmitting substrate, depositing a shading layer over the light transmitting substrate, and removing a portion of the shading layer and a portion of the phase shifter to expose a portion of the light transmitting substrate. The phase shifter having at least two semiconductor layers and at least two dielectric layers.
Claims20
A method of fabricating a photomask, comprising:
- depositing a phase shifter over a light transmitting substrate, the phase shifter having at least two semiconductor layers and at least two dielectric layers;
- depositing a shading layer over the light transmitting substrate;
- and
- removing a portion of the shading layer and a portion of the phase shifter to expose a portion of the light transmitting substrate.
1 more element
A phase shift mask (PSM), comprising:
- a light transmitting substrate;
- and
- a phase shifter over the light transmitting substrate, wherein the phase shifter has from 2 to 12 pairs of semiconductor layers and dielectric layers stacked in an alternating fashion.
A method of fabricating a photomask, comprising:
- depositing a phase shifter over a light transmitting substrate, the phase shifter comprising a first semiconductor layer, at least one pair of a first dielectric layer and a second semiconductor layer over the first semiconductor layer, and a second dielectric layer over the at least one pair of the first dielectric layer and the second semiconductor layer;
- depositing a shading layer over the phase shifter;
- and
- removing a first portion of the shading layer and a portion of the phase shifter to expose a portion of the light transmitting substrate.
1 more element
Dependencies are inferred from the claim text.