Method for producing single crystal

A manufacturing method of a monocrystal having a shoulder-formation step to form a shoulder of the monocrystal, and a straight-body-formation step to form a straight body of the monocrystal in accordance with Czochralski process, using a monocrystal pull-up apparatus provided with

• a chamber,
• a crucible disposed in the chamber and configured to receive a dopant-added melt in which a dopant is added to a silicon melt, and
• a pull-up unit configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt,
• the method comprising:
• charging the dopant-added melt at an amount capable of manufacturing a plurality of monocrystals at one time in the crucible;
• and
• manufacturing the plurality of the monocrystals one by one without adding a silicon material and the dopant to the crucible, wherein
• provided that a distance from a lowermost portion inside the crucible to a top surface of the dopant-added melt is defined as H (mm) and a radius of the top surface of the dopant-added melt is defined as R (mm), the shoulder of each of the plurality of the monocrystals starts to be formed in a condition that a formula (1) is satisfied,
• 0. 4<H/R<0.78 (1).