Wafer-level manufacturing method for embedding passive element in glass substrate

A wafer-level manufacturing method for embedding passive elements in a glass substrate, comprising the following steps:

• step 1:
• dry-etching a highly-doped silicon wafer to form a highly-doped silicon mould wafer, containing a passive component structure mould seated in cavity arrays, unetched silicon between the cavity arrays being used for subsequent component separation;
• step 2:
• anodically-bonding a glass wafer to the highly-doped silicon mould wafer obtained in step 1 in a vacuum, to seal the cavity arrays in the bonded glass wafer and highly-doped silicon mould wafer;
• step 3:
• heating the bonded glass wafer and highly-doped silicon mould wafer obtained in step 2 in air at a temperature higher than a softening point temperature of the glass wafer to melt the glass wafer, maintaining the temperature until the molten glass is reflowed to fill gaps in the cavity arrays due to a pressure difference inside and outside the cavities, and annealing and cooling to room temperature to form a reflowed wafer with a three-layer structure including a lower all-highly-doped-silicon substrate, a middle composite structure of the glass substrate embedded with the passive component structure mould and the unetched silicon, and an upper all-glass substrate;
• step 4:
• fully grinding and polishing the all-glass substrate of the reflowed wafer obtained in step 3, so as to expose an upper surface of the embedded passive component structure mould on an upper surface of the glass substrate;
• step 5:
• dry etching the passive component structure mould embedded in the glass substrate;
• step 6:
• using the all-highly-doped-silicon substrate as a seed layer, filling, via copper electroplating, blind holes in the glass substrate after the passive component structure mould has been etched, thereby forming the passive elements embedded in the glass substrate;
• step 7:
• wet-etching the all-highly-doped-silicon substrate and the unetched silicon between the cavity arrays to obtain several self-separating glass substrates embedded with the passive elements;
• and
• step 8:
• performing surface processing on the glass substrates obtained in step 7 to form electrodes for the passive elements, by depositing a metal adhesion layer and electroplating a metal conductive layer.