US 10,321,078 B2 · Circuitry and method for readout of hybrid bonded image sensors

Abstract

A hybrid bonded image sensor has a photodiode die with macrocells having at least one photodiode and a bond contact; a supporting circuitry die with multiple supercells, each supercell having at least one macrocell unit bonded to the bond contact of a macrocell of the photodiode die. Each macrocell unit has a reset transistor adapted to reset photodiodes of the photodiode die macrocell. Each supercell has a differential amplifier configurable to receive a noninverting input from a photodiode and an inverting input, the differential amplifier providing an output, each differential amplifier has an amplifier reset transistor coupled to the differential amplifier output and the inverting input; a first capacitor coupled between the differential amplifier output and the inverting input, and a second capacitor coupled between the inverting input and a signal ground. The first and second capacitor of embodiments has controllable capacitance to adjust gain.

Claims7

Dependent claims

A hybrid bonded image sensor comprising:

a photodiode die comprising a plurality of macrocells, where each macrocell comprises at least one photodiode and a connection point;
a supporting circuitry die comprising a plurality of supercells, each supercell comprising at least one macrocell unit, each macrocell unit comprising at least one connection point bonded to the connection point of a macrocell of the photodiode die and a reset transistor adapted to reset photodiodes of the macrocell of the photodiode die;
and
each supercell comprising:
a differential amplifier configurable to receive a noninverting input from a photodiode and an inverting input, the differential amplifier adapted to provide a differential amplifier output;
an amplifier reset transistor coupled to the differential amplifier output and the inverting input.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/979,366Filed 14 May 2018 · continuation

Priority

1 Feb 2017

Published

US 2018/0262704 A113 Sep 2018

Granted

11 Jun 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H04N 25/766
Addressed sensors, e.g. MOS or CMOS sensors: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving,…
H04N 23/76
Circuitry for compensating brightness variation in the scene: by influencing the image signals
H04N 25/616
Noise processing, e.g. detecting, correcting, reducing or removing noise: involving a correlated sampling function, e.g. correlated double…
H04N 25/77
Addressed sensors, e.g. MOS or CMOS sensors: pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Circuitry and method for readout of hybrid bonded image sensors

Life of this patent

Circuitry and method for readout of hybrid bonded image sensors

Life of this patent

Abstract

Claims7