Power circuit and power module using MISFET having control circuit disposed between gate and source

A power module comprising a power circuit, wherein the power circuit comprises:

• a main substrate comprising a front side surface and a back side surface;
• a first wiring pattern disposed on the front side surface of the main substrate, the first wiring pattern connected to a first terminal;
• a second wiring pattern disposed on the front side surface of the main substrate, the third wiring pattern connected to a second terminal;
• a first MISFET of which a first drain is disposed on the first electrode pattern, the first MISFET comprising a source electrode and a gate electrode on an upper surface thereof;
• a third wiring pattern disposed on the front side surface of the main substrate, the third wiring pattern electrically connected to the gate electrode;
• and
• a fourth wiring pattern disposed on the front side surface of the main substrate, the fourth wiring pattern electrically connected to the source electrode, wherein
• a first control circuit configured to control a current path conducted towards the gate electrode from the source electrode is disposed between the third wiring pattern and the fourth wiring pattern, wherein
• the power module further comprising external terminals configured to respectively extend signals of the third and fourth wiring patterns to an outside of the main substrate.

A semiconductor device, comprising:

• a die substrate comprising a front side surface and a back side surface, the die substrate further comprising a first external terminal;
• an MISFET of which a drain is disposed on the front side surface of the die substrate, the MISFET comprising a source electrode and a gate electrode on the upper surface thereof;
• a second external terminal disposed so as to be adjacent to the first external terminal, the second external terminal electrically connected to the source electrode;
• a third external terminal disposed so as to be adjacent to the first external terminal, the third external terminal electrically connected to the gate electrode;
• a control circuit of which an anode electrode is disposed on the second external terminal, and a cathode electrode disposed on the upper surface thereof;
• a connecting means configured to electrically connect the third external terminal with the cathode electrode;
• and
• a package configured to seal at least a part of each external terminal, the first MISFET, and the connecting means.

A power module comprising:

• a main substrate comprising a front side surface;
• a first wiring pattern disposed on the front side surface of the main substrate;
• a second wiring pattern disposed on the front side surface of the main substrate;
• a first MISFET of which a first drain is disposed on the first wiring pattern, the first MISFET comprising a source electrode and a gate electrode on an upper surface thereof;
• a first pillar connection electrode electrically connected to the source electrode of the first MISFET;
• a plate electrode electrically connected to the first pillar connection electrode;
• and
• a gate control conductive portion electrically connected between the gate electrode of the first MISFET and the second wiring pattern.