RF production using nonlinear semiconductor junction capacitance

A nonlinear transmission line comprising:

• a high voltage input configured to receive electrical pulses having a first peak voltage that is greater than 5 kV having a first rise time;
• a first nonlinear semiconductor junction capacitance device;
• and
• a second nonlinear semiconductor junction capacitance device;
• and
• a first inductor electrically coupled with the first nonlinear semiconductor junction capacitance device and the second nonlinear semiconductor junction capacitance device;
• a third nonlinear semiconductor junction capacitance device;
• and
• a second inductor electrically coupled with the second nonlinear semiconductor junction capacitance device and the third nonlinear semiconductor junction capacitance device;
• a fourth nonlinear semiconductor junction capacitance device;
• and
• a third inductor electrically coupled with the third nonlinear semiconductor junction capacitance device and the fourth nonlinear semiconductor junction capacitance device;
• a fifth nonlinear semiconductor junction capacitance device;
• and
• a fourth inductor electrically coupled with the fourth nonlinear semiconductor junction capacitance device and the fifth nonlinear semiconductor junction capacitance device;
• a high voltage output providing a high voltage output signal that oscillates at a frequency greater than 100 MHz about a voltage greater than 5 kV;
• and
• a fifth inductor electrically coupled with the fifth nonlinear semiconductor junction capacitance device and the high voltage output.