US 10,320,329 B2 · Method and system for determining current-voltage characteristics of a photovoltaic installation

Abstract

The method includes connecting a MOSFET-type transistor to the photovoltaic installation; applying, to the transistor, a signal of a control voltage (Vgs) that crosses a linear regime range (φlin) of the transistor, between two critical voltages including a saturation voltage (Vgs(sat)) and a threshold voltage (Vgs(th)), and measuring the current and the voltage of the photovoltaic installation while the linear regime range of the transistor is being crossed. The control voltage signal (Vgs) of the transistor is generated from a digital control signal. The transistor initially being in short-circuit (φcc) or open-circuit (φco) regime, a command is issued for a first, rapid variation (BT1) in the control voltage (Vgs) in the direction of the linear regime range of the transistor, then a second, slow variation (BT2) in the control voltage (Vgs) crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.

Claims20

Dependent claims

A method for determining current-voltage characteristics of a photovoltaic installation comprising:

connecting a MOSFET-type transistor to the photovoltaic installation;
applying, to the transistor, a signal of a control voltage that crosses a linear regime range of the transistor, between two critical voltages comprising a saturation voltage and a threshold voltage;
and
measuring the current and the voltage of the photovoltaic installation while the range corresponding to the linear regime of the transistor is being crossed,
wherein the control voltage signal of the transistor is generated from a digital control signal and wherein, the transistor initially being in short-circuit or open-circuit regime, a command is issued for a first, rapid variation in the control voltage in the direction of the linear regime range of the transistor, then a second, slow variation in the control voltage crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.

2 more elements

A system for determining current-voltage characteristics of a photovoltaic installation comprising a MOSFET-type transistor to be connected to the terminals of the photovoltaic installation, a control circuit configured to apply, to the transistor, a signal of a control voltage that crosses a linear regime range of the transistor, between two critical voltages comprising a saturation voltage and a threshold voltage, and a measuring device for measuring the current and the voltage of the photovoltaic installation while the range corresponding to the linear regime of the transistor is being crossed,

wherein the control circuit is a digital control circuit adapted to produce a control voltage signal of the transistor, initially in short-circuit or open-circuit regime, which comprises a first, rapid variation in the control voltage in the direction of the linear regime range of the transistor, then a second, slow variation in the control voltage crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.

Dependencies are inferred from the claim text.

Method and system for determining current-voltage characteristics of a photovoltaic installation

Life of this patent

Method and system for determining current-voltage characteristics of a photovoltaic installation

Life of this patent

Abstract

Claims20