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US 10,320,153 B1Granted
Systems and methods of an L-switched light emission
OwnerRudolf Heinrich Binder, Nai-Hang Kwong +1inventors
InventorsRudolf Heinrich Binder, Nai-Hang Kwong, Paul Bryan Lundquist
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Abstract
Provided herein are systems and methods for switching the generation of light emissions using charge separation in a gain medium to manipulate carrier lifetimes. For a given output pulse energy, extended carrier lifetimes may allow carrier generation powers to be reduced and/or carrier generation times to be extended. L-switching of light output from a gain medium may be combined with other switching schemes utilizing different approaches to control lasing, such as Q-switching.
Claims14
A light emitter comprising:
- a gain structure for providing an optical gain via stimulated emission, the gain structure including a confinement region for charge carriers within a direct-bandgap structure defined by a continuum of charge carrier densities of states along each of a first dimension and a second dimension, the first dimension and the second dimension comprising a planar region of the confinement region, the continuum of charge carrier densities of states adapted for accumulating charge carriers in the direct-bandgap structure, wherein the direct-bandgap structure is configured for producing a stimulated pulsed-light emission comprising a multitude of photons;
- an input surface of the light emitter configured to route light to the confinement region where the light undergoes the optical gain via stimulated emission;
- an optical emission path of the light emitter that is orthogonal the planar region of the confinement region and that directs light created via stimulated emission in the gain structure through an emission surface of the light emitter;
- and
- a plurality of electrodes configured to modify an electric field in a direction orthogonal to the planar region of the confinement region to spatially-redistribute charge carriers within the direct-bandgap structure into at least:
- A) a spatially-accumulating configuration of the charge carriers that does not result in the stimulated pulsed-light emission from the confinement region, and that:
- 1. accumulates charge carriers into the continuum of charge carrier densities of states in the direct-bandgap structure, while the direct-bandgap structure is in a direct-bandgap state, in the confinement region;
- and
- 2. distributes the accumulated charge carriers, of both polarities, into portions of the direct-bandgap structure in the confinement region;
- and
- B) a spatially-overlapping configuration of the accumulated charge carriers for depletion of the accumulated charge carriers that have been accumulated in the spatially-accumulating configuration in the continuum of charge carrier densities of states in the direct-bandgap structure in the confinement region, wherein the spatially-overlapping configuration spatially-distributes the accumulated charge carriers to produce the stimulated pulsed-light emission comprising the multitude of photons from the confinement region.
8 more elements
Dependencies are inferred from the claim text.