Evaporation method and evaporation device for organic light-emitting diode substrate

An evaporation device for implementing an evaporation method, wherein the evaporation method includes:

• step 1, regulating a distance between a supporting module for supporting a substrate and a crucible platform of an evaporation device,
• step 2, adjusting a direction of opening of a crucible disposed on the crucible platform, and
• step 3, placing a substrate to be evaporated on the supporting module and volatizing an evaporation source in the crucible and attaching the volatized evaporation source onto a surface of the substrate;
• and
• wherein the evaporation device comprises:
• the supporting module for supporting the substrate,
• the crucible platform disposed under the supporting module, the crucible being disposed on the crucible platform,
• the evaporation source disposed in the crucible, and
• a driving module for driving the crucible to rotate, the driving module comprising a driving shaft fixedly connected with the crucible and a driving source connected with the driving shaft;
• wherein in step 1, the evaporation source is selected and volatized, so as to form a single film layer on a corresponding first test substrate;
• different first test points are selected on the first test substrate, so as to obtain a thickness value of the single film layer at each of the first test points;
• a ratio of a difference between a maximum value and a minimum value of the thickness values of the single film layer at the first test points on the first test substrate to a sum thereof is calculated to obtain a test single film layer thickness homogeneity parameter;
• and a comparison of the test single film layer thickness homogeneity parameter with a standard single film layer thickness homogeneity parameter is made, so as to adjust the distance between the supporting module and the crucible platform;
• wherein the standard single film layer thickness homogeneity parameter is in a range of 1-3%, and
• wherein when the test single film layer thickness homogeneity parameter is smaller than 1%, the distance between the supporting module and the crucible platform is reduced, and when the test single film layer thickness homogeneity parameter is larger than 3%, the distance between the supporting module and the crucible platform is increased.