End-bonded metal contacts on carbon nanotubes

A method of forming an end-bonded contact on a semiconductor device, comprising:

• forming a dielectric layer on a substrate;
• depositing a carbon nanotube layer onto the dielectric layer;
• depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed;
• depositing a contact metal onto the carbon nanotube layer such that the contact metal contacts the exposed carbon nanotube layer, the contact metal being a metal that does not form stable carbides at a temperature of less than about 1000° C.;
• and
• annealing the device such that a portion of the carbon nanotube layer dissolves into the contact metal forming an end-bonded contact, wherein the end-bonded contact is in direct physical contact with the dielectric layer and contacts the carbon nanotube layer at a single contact interface surface between the end-bonded contact and the carbon nanotube layer, and wherein annealing consists of thermally annealing.