Wiring pattern production method and transistor production method

A wiring pattern production method comprising:

• forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group;
• forming a photoresist layer including a photoresist material on a surface of the precursor film;
• exposing the photoresist layer with a desired pattern of light;
• exposing the precursor film with a desired pattern of light to form the plating base film;
• developing the exposed photoresist layer and removing a deprotected protecting group;
• and
• depositing an electroless plating catalyst on the exposed surface of the plating base film,
• wherein, after removing the photoresist layer, a remainder of the precursor film is further exposed to light.

A wiring pattern production method comprising:

• forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group;
• forming a photoresist layer including a photoresist material on a surface of the precursor film;
• exposing the photoresist layer with a desired pattern of light;
• exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer and removing a deprotected protecting group;
• and
• depositing an electroless plating catalyst on the exposed surface of the plating base film;
• wherein the precursor film includes a group having at least one of a nitrogen atom and a sulfur atom and the group having the at least one of the nitrogen atom and the sulfur atom further includes a second formation material which is not protected by the protecting group.