US 10,319,903 B2 · Multiferroic magnetic tunnel junction devices

Abstract

Some embodiments include a magnetic tunnel junction device having a first magnetic electrode, a second magnetic electrode, and a tunnel insulator material between the first and second magnetic electrodes. A tungsten-containing material is directly against one of the magnetic electrodes. In some embodiments the tungsten-containing material may be in a first crystalline lattice arrangement, and the directly adjacent magnetic electrode may be in a second crystalline lattice arrangement different from said first crystalline lattice arrangement. In some embodiments the tungsten-containing material, the first magnetic electrode, the tunnel insulator material and the second magnetic electrode all comprise a common crystalline lattice arrangement.

Claims16

Dependent claims

A magnetic tunnel junction device, comprising:

a first magnetic electrode comprising a first composition comprising Fe and Co, a second magnetic electrode comprising a second composition comprising Fe and Co, and a tunnel insulator material between the first and second magnetic electrodes;
and
a tungsten-containing material directly against one of the magnetic electrodes, the tungsten-containing material further comprising one or both of Ru and Ir, wherein an elevationally lowest material of the magnetic tunnel junction device is one of the first composition comprising Fe and Co and the second composition comprising Fe and Co, the tungsten-containing material having a body-centered cubic crystalline lattice arrangement, and said one of the magnetic electrodes being in a face-centered cubic crystalline lattice arrangement.

Dependencies are inferred from the claim text.

Multiferroic magnetic tunnel junction devices

Life of this patent

Multiferroic magnetic tunnel junction devices

Life of this patent

Abstract

Claims16