Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device

A spin-orbit torque type magnetization reversal element comprising:

• a ferromagnetic metal layer with a varying magnetization direction;
• and
• spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the ferromagnetic metal layer and that is joined to the ferromagnetic metal layer;
• wherein
• when viewed from the first direction, the spin-orbit torque wiring is asymmetrical in a second direction that is orthogonal to the first direction and the stacking direction, with respect to an axis that passes through a center, in the second direction, of the ferromagnetic metal layer, and
• the spin-orbit torque wiring is configured to reverse the magnetization of the ferromagnetic layer by inducing spin orbit torque in the ferromagnetic layer.