Method of forming a semiconductor device

A method of forming a microelectronic device, comprising the steps:

• forming a layer of piezoelectric material over a substrate;
• exposing a top surface of the layer of piezoelectric material to an oxygen plasma;
• forming a piezoelectric element mask on the layer of piezoelectric material;
• thermally baking the piezoelectric element mask;
• baking the piezoelectric element mask while exposing the piezoelectric element mask to ultraviolet (UV) radiation;
• removing at least a portion of the layer of piezoelectric material, where exposed by the piezoelectric element mask, by a first wet etch using an etch chemistry;
• exposing the microelectronic device to a rinse process;
• exposing the layer of piezoelectric material to a second wet etch comprising the etch chemistry;
• and
• removing the piezoelectric element mask.

A method of forming a microelectronic device, comprising the steps:

• forming a layer of piezoelectric material over a substrate;
• forming a piezoelectric element mask on the layer of piezoelectric material;
• removing at least a portion of the layer of piezoelectric material, where exposed by the piezoelectric element mask, by a first wet etch comprising an aqueous solution of ammonium fluoride (NH4F), hydrofluoric acid (HF), and hydrochloric acid (HCl);
• exposing the microelectronic device to an agitated rinse process;
• exposing the layer of piezoelectric material to a second wet etch comprising an aqueous solution of NH4F, HF, and HCl;
• removing the aqueous solution of the second wet etch by a rinse process;
• and
• removing the piezoelectric element mask.