Resonance circuit with a single crystal capacitor dielectric material
AssigneeAkoustis, Inc.
InventorJeffrey B. Shealy
Life of this patent
Estimating the term…
Abstract
A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material.
Claims42
A method for fabricating a single crystal acoustic electronic device the method comprising:
- providing a substrate having a via cavity formed through a portion of the substrate, the substrate having a surface region and a backside surface region;
- forming a first electrode material coupled to a portion of the backside surface region and spatially configured within the via cavity;
- forming a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity and coupled to the first electrode material through the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2;
- and
- forming a second electrode material overlying the single crystal capacitor dielectric material.
A method of fabricating a single crystal acoustic electronic device, the method comprising:
- providing a substrate having a via cavity formed through a portion of the substrate, the substrate having a surface region and a backside surface region;
- forming a first electrode material coupled to a portion of the backside surface region and spatially configured within the via cavity to form a via structure within a portion of the substrate;
- forming a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity and coupled to the first electrode material through the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2;
- and
- forming a second electrode material overlying the single crystal capacitor dielectric material.
A single crystal acoustic electronic device comprising:
- a substrate, the substrate having a surface region and a backside surface region;
- a via cavity through a portion of the substrate;
- a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2;
- a first electrode material coupled to the single crystal capacitor dielectric material through the via cavity, the first electrode material being coupled to a portion of the backside surface region and spatially configured within the via cavity;
- and
- a second electrode material overlying the single crystal capacitor dielectric material;
- a nucleating material overlying the surface region;
- and a thickness of the single crystal capacitor dielectric overlying the nucleating material.
A single crystal acoustic electronic device comprising:
- a substrate, the substrate having a surface region and a backside surface region;
- a via cavity through a portion of the substrate;
- a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2;
- a first electrode material coupled to the single crystal capacitor dielectric material through the via cavity, the first electrode material being coupled to a portion of the backside surface region and spatially configured within the via cavity;
- and
- a second electrode material overlying the single crystal capacitor dielectric material.
A device of fabricating a single crystal acoustic electronic device comprising:
- a substrate, the substrate having a surface region and a backside surface region;
- a via cavity through a portion of the substrate;
- a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying the via cavity, the single crystal capacitor dielectric material being characterized by a dislocation density of less than 1012 defects/cm2;
- a first electrode material coupled to the single crystal capacitor dielectric material through the via cavity, the first electrode material being coupled to a portion of the backside surface region and spatially configured within the via cavity to form a via structure within a portion of the substrate;
- and
- a second electrode material overlying the single crystal capacitor dielectric material.
Dependencies are inferred from the claim text.