Light emitting diode

A light emitting diode, comprising:

• a first conductive type semiconductor layer;
• a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;
• a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer;
• a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising a first portion configured to be in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer;
• a lower insulating layer disposed between the mesa and the current spreading layer as well as the reflective electrode and the current spreading layer, the lower insulating layer configured to insulate the current spreading layer from the mesa and the reflective electrode;
• an upper insulating layer covering the current spreading layer, the upper insulating layer comprising a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa;
• and
• a first pad disposed on the current spreading layer through the first hole of the upper insulating layer such that the first pad is in ohmic contact with the first portion of the current spreading layer that is disposed on the mesa.

A light emitting diode, comprising:

• a first conductive type semiconductor layer;
• a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;
• a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa;
• a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising:
• a first portion configured to be in ohmic-contact with a first end portion of the first conductive type semiconductor layer;
• a second portion configured to be in ohmic-contact with a second end portion of the first conductive type semiconductor layer;
• and
• a third portion configured to be in ohmic-contact with an intermediate portion of the first conductive type semiconductor layer disposed between the first and second end portions, wherein the third portion is disposed between the first and second end portions of the first conductive type semiconductor layer;
• an insulation layer disposed on the mesa and covering an edge of the first conductive type semiconductor layer, the insulation layer comprising:
• a lower insulating layer disposed between the mesa and the current spreading layer as well as between the reflective electrode and the current spreading layer, the lower insulating layer configured to insulate the current spreading layer from the mesa and the reflective electrode;
• and
• an upper insulating layer covering the current spreading layer, the upper insulating layer comprising a first hole exposing a fourth portion of the current spreading layer that is disposed on an upper portion of the mesa.