US 10,319,883 B2 · Semiconductor device and display unit

Abstract

A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode.

Claims19

Dependent claims

A semiconductor device comprising:

a substrate;
a gate electrode provided on the substrate;
an oxide semiconductor film provided on the substrate with the gate electrode being interposed therebetween, the oxide semiconductor film including a channel region that faces the gate electrode and a low-resistance region adjacent to the channel region;
a first electrode that contains a constituent material same as a constituent material of the gate electrode, the first electrode having a same thickness as a thickness of the gate electrode;
a second electrode having at least a portion that faces the first electrode, the second electrode containing a constituent material same as a constituent material of the oxide semiconductor film;
and
a third electrode having at least a portion that is provided at a position facing the first electrode with the second electrode being interposed therebetween, the third electrode being electrically coupled to the first electrode and to the low-resistance region.

4 more elements

A display unit comprising:

a semiconductor device;
and
a display element layer that is provided on the semiconductor device, and includes a plurality of pixels,
the semiconductor device including
a substrate,
a gate electrode provided on the substrate,
an oxide semiconductor film provided on the substrate with the gate electrode being interposed therebetween, the oxide semiconductor film including a channel region that faces the gate electrode and a low-resistance region adjacent to the channel region,
a first electrode that contains a constituent material same as a constituent material of the gate electrode, the first electrode having a same thickness as a thickness of the gate electrode,
a second electrode having at least a portion that faces the first electrode, the second electrode containing a constituent material same as a constituent material of the oxide semiconductor film,
a third electrode having at least a portion that is provided at a position facing the first electrode with the second electrode being interposed therebetween, the third electrode being electrically coupled to the first electrode;
and
a source/drain electrode electrically coupled to the low-resistance region and to the first electrode.

9 more elements

Dependencies are inferred from the claim text.

Semiconductor device and display unit

Life of this patent

Semiconductor device and display unit

Life of this patent

Abstract

Claims19