Semiconductor structure

A semiconductor structure, comprising:

• a first-type semiconductor layer;
• a second-type semiconductor layer;
• a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer;
• and
• a hole supply layer, disposed between the light emitting layer and the second-type semiconductor layer, the hole supply layer being an AlInGaN based layer, wherein the hole supply layer, a concentration curve of aluminum in the hole supply layer has two adjacent peaks comprising a first peak nearby the light emitting layer and a second peak nearby the second-type semiconductor layer,
• wherein the hole supply layer is doped with magnesium in a concentration greater than or equal to 1019 atom/cm3, and a concentration curve of magnesium in the hole supply layer has a third peak located between the first peak and the second peak of the concentration curve of aluminum.

A semiconductor structure, comprising:

• a first-type semiconductor layer;
• a second-type semiconductor layer;
• a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer;
• a first gallium nitride (GaN) based layer, comprising aluminum and indium, and disposed between the light emitting layer and the second-type semiconductor layer;
• a second GaN based layer comprising aluminum and indium, disposed between the first GaN based layer and the second-type semiconductor layer;
• and
• a third GaN based layer, comprising aluminum and indium, and disposed between the second GaN based layer and the second-type semiconductor layer,
• wherein an aluminum content in the first GaN based layer, as compared to an aluminum content in the second GaN based layer, has a first peak in terms of the concentration curve of aluminum, and an aluminum content in the third GaN based layer, as compared to the aluminum content in the second GaN based layer, has a second peak in terms of the concentration curve of aluminum,
• wherein the first, second and third GaN based layers are doped with magnesium in a concentration greater than or equal to 1019 atom/cm3, and the first GaN based layer is doped with carbon in a concentration greater than or equal to 3×1017 atom/cm3.

A semiconductor structure, comprising:

• a first-type semiconductor layer;
• a second-type semiconductor layer;
• a light emitting layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer;
• and
• a hole supply layer, being an AlInGaN based layer doped with carbon, disposed between the light emitting layer and the second-type semiconductor layer, wherein the hole supply layer comprises a first hole supply layer, a second hole supply layer and a third hole supply layer, the first hole supply layer is disposed between the light emitting layer and the second hole supply layer, the second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, and the third hole supply layer is disposed between the second hole supply layer and the second-type semiconductor layer, wherein an aluminum content in the first hole supply layer, as compared to an aluminum content in the second hole supply layer, has a first peak in terms of a concentration curve of aluminum, and an aluminum content in the third hole supply layer, as compared to the aluminum content in the second hole supply layer, has a second peak in terms of the concentration curve of aluminum,
• wherein the first, second and third hole supply layers are doped with magnesium in a concentration greater than or equal to 1019 atom/cm3.