Method of forming micro light emitting diode

A method of forming a micro light emitting diode (LED), comprising:

• providing a substrate;
• depositing and forming a first buffer layer on the substrate;
• etching pre-determined spots on the first buffer layer to expose the substrate on the pre-determined spots;
• growing hollow micrometer/nanometer tubes on the pre-determined spots on the substrate to get a buffer layer column;
• growing a n-GaN layer on an outer wall of the buffer layer column;
• depositing and forming a second buffer layer on the n-GaN layer;
• etching the second buffer layer to expose parts of the n-GaN layer;
• forming a multiple quantum well (MQW) layer and a p-GaN layer sequentially on the n-GaN layer to get a body of layers structuring the PN junction;
• forming a first electrode on an outer side of the body of layers structuring the PN junction, and after removing the buffer layer column, forming a second electrode on an inner side of the body of layers structuring the PN junction, with the first electrode and second electrode insulating to each other in areas outside the body of layers structuring the PN junction.