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US 10,319,857 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Fen Chen, Chui-Ya Peng, Ching Yu, Pin-Hen Lin, Yen Chuang, Yuh-Ta Fan
Life of this patent
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Abstract
A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.
Claims20
A semiconductor device, comprising:
- a substrate comprising silicon;
- an epitaxy structure in the substrate;
- an isolation structure in the substrate and having a sidewall facing the epitaxy structure;
- a gate stack adjacent the epitaxy structure;
- a spacer on a sidewall of the gate stack;
- a silicide region over the epitaxy structure and in contact with the spacer;
- and
- a liner in contact with the silicide region and between the substrate and the epitaxy structure, wherein the liner includes silicon denser than that in the substrate, the sidewall of the isolation structure facing the epitaxy structure has a first portion in contact with the liner and a second portion over the first portion, the second portion is free from coverage by the liner, and the epitaxy structure is spatially separated from the spacer.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a liner in the substrate;
- an isolation structure in the substrate;
- an epitaxy structure over the liner and in contact with the isolation structure;
- a gate stack over the substrate;
- and
- a spacer on a sidewall of the gate stack, wherein the epitaxy structure is spatially separated from the spacer by the liner and the liner includes an outer surface and an inner surface that has less number of corners than the outer surface thereof.
4 more elements
A semiconductor device, comprising:
- a substrate;
- an epitaxy structure in the substrate;
- an isolation structure in the substrate;
- a liner between the substrate and the epitaxy structure;
- a gate stack over the substrate;
- a spacer on a sidewall of the gate stack;
- and
- a silicide region over the epitaxy structure and in contact with the isolation structure, the liner, and the spacer, wherein an interface between the liner and the silicide region is level with a bottom surface of the spacer.
5 more elements
Dependencies are inferred from the claim text.