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US 10,319,856 B2Granted
Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Yu-Cheng Tung
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Abstract
The present invention provides a semiconductor device, including a substrate, two gate structures disposed on a channel region of the substrate, an epitaxial layer disposed in the substrate between two gate structures, a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines.
Claims14
A semiconductor device, comprising:
- a substrate;
- two gate structures disposed on the substrate;
- an epitaxial layer disposed in the substrate between two gate structures;
- a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a V profile;
- a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a reverse V profile, and wherein the first dislocation does not contact a top surface of the epitaxial layer directly, and an intersection point of the at least two non-parallel slanting lines of the first dislocation is disposed in the epitaxial layer, wherein the intersection point is disposed below the top surface of the epitaxial layer;
- and
- a contact structure directly contacts the top surface of the epitaxial layer, wherein part of the contact structure is disposed lower than a top surface of the substrate.
4 more elements
A semiconductor device, comprising:
- a substrate;
- two gate structures disposed on the substrate;
- an epitaxial layer disposed in the substrate between two gate structures, wherein a bottom portion of the epitaxial layer is larger than a top portion thereof;
- a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a V profile, and an intersection point of the at least two non-parallel slanting lines of the second dislocation is disposed in the epitaxial layer, wherein the intersection point is disposed below the top surface of the epitaxial layer;
- and
- a contact structure directly contacts the top surface of the epitaxial layer, wherein part of the contact structure is disposed lower than a top surface of the substrate.
3 more elements
Dependencies are inferred from the claim text.