Method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yang Lo, Shih-Hao Chen, Mu-Tsang Lin, Tung-Wen Cheng
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Abstract
A method for manufacturing a semiconductor device includes forming a gate stack over a semiconductor fin such that the gate stack exposes the semiconductor fin. The semiconductor fin exposed by the gate stack is recessed. An epitaxy structure is epitaxially grown on a recessed portion of the semiconductor fin, and the epitaxy structure is etched such that the epitaxy structure has a curved top.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a gate stack over a semiconductor fin such that a portion of the semiconductor fin is uncovered by the gate stack;
- recessing the portion of the semiconductor fin;
- epitaxially growing an epitaxy structure on a recessed portion of the semiconductor fin;
- and
- etching the epitaxy structure, wherein the etched epitaxy structure has a curved top.
A method for manufacturing a semiconductor device, the method comprising:
- forming a pair of sidewall structures at opposite sides of a semiconductor fin;
- shaping the sidewall structures;
- recessing the semiconductor fin to expose the shaped sidewall structures;
- and
- epitaxially growing an epitaxy structure on a recessed portion of the semiconductor fin such that the epitaxy structure has a body portion between the shaped sidewall structures and a top portion over the body portion, and a width of the top portion is greater than a width of the body portion.
A method for manufacturing a semiconductor device, the method comprising:
- forming a gate stack over a semiconductor fin, wherein a portion of the semiconductor fin is uncovered by the gate stack;
- recessing the portion of the semiconductor fin;
- epitaxially growing an epitaxy structure on a recessed portion of the semiconductor fin;
- and
- rounding a top portion of the epitaxy structure.
Dependencies are inferred from the claim text.