Semiconductor structure and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsZhong Shan Hong, Ke Lu Hua, Jin Peng
Life of this patent
Estimating the term…
Abstract
A semiconductor structure and a method for fabricating a semiconductor structure are provided. The method includes forming one or more fins on a substrate, wherein each fin includes a first sidewall and a second sidewall opposing each other. The method also includes forming a sacrificial layer over the fin. Further, the method also includes performing a first ion implantation process on the first sidewall and a top of the fin, and performing a second ion implantation process on the second sidewall and the top of the fin.
Claims15
A method for fabricating a semiconductor structure, comprising:
- providing a base substrate;
- forming a sacrificial material layer on the base substrate;
- forming a mask layer on the sacrificial material layer;
- forming the sacrificial layer and the fins using the mask layer as a mask to etch the sacrificial material layer and the base substrate;
- removing the mask layer, wherein each fin includes a first sidewall and a second sidewall opposing each other;
- removing a thickness portion of the sacrificial layer;
- performing a first ion implantation process on the first sidewall and a top of the fin;
- and
- performing a second ion implantation process on the second sidewall and the top of the fin.
A method for fabricating a semiconductor structure, comprising:
- providing a base substrate;
- forming a sacrificial material layer on the base substrate;
- forming a mask layer on the sacrificial material layer;
- forming the sacrificial layer and the fins using the mask layer as a mask to etch the sacrificial material layer and the base substrate;
- removing the mask layer, wherein each fin includes a first sidewall and a second sidewall opposing each other;
- forming a liner layer covering the first sidewall and the second sidewall of each fin, wherein a thickness of the sacrificial layer is larger than a thickness of the liner layer;
- performing a first ion implantation process on the first sidewall and a top of the fin;
- and
- performing a second ion implantation process on the second sidewall and the top of the fin.
Dependencies are inferred from the claim text.