III-V fin generation by lateral growth on silicon sidewall

A method, comprising:

• providing a structure defined by a silicon material on a buried oxide layer of a substrate;
• causing a nucleation of a III-V material in a sidewall of the structure defined by the silicon material;
• adjusting one or more of a temperature and a pressure to facilitate a first growth rate of the III-V material in directions along a surface of the sidewall and a second growth rate of the III-V material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate;
• and
• processing the silicon material and the III-V material to form a fin;
• wherein processing the silicon material and the III-V material to form a fin comprises disposing an oxide layer over the structure defined by a silicon material and the buried oxide layer, planarizing the oxide layer and the fin, and removing excess oxide layer using a wet-etch technique.