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AssigneeToyota Jidosha Kabushiki Kaisha
InventorsToru Onishi, Shuhei Oki, Tomoharu Ikeda, Rahman Md. Tasbir
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Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.
A semiconductor device comprising:
Dependencies are inferred from the claim text.