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US 10,319,830 B2Granted
Heterojunction bipolar transistor power amplifier with backside thermal heatsink
AssigneeQUALCOMM Incorporated
InventorsBin Yang, Gengming Tao, Xia Li
Life of this patent
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Abstract
A heterojunction bipolar transistor may include an emitter, a base contacting the emitter, a collector contacting the base, a sub-collector contacting the collector, and an electrical isolation layer contacting the sub-collector. The heterojunction bipolar transistor may also include a backside heatsink thermally coupled to the sub-collector and the collector. The backside heatsink may be aligned with a central axis of the emitter and the base.
Claims10
A heterojunction bipolar transistor, comprising:
- an emitter;
- a base contacting the emitter;
- a collector contacting the base;
- a sub-collector contacting the collector;
- means for dissipating heat from the collector through the sub-collector;
- and
- a thermally conductive etch stop layer lining the sub-collector and arranged between the means for dissipating heat and the sub-collector.
4 more elements
A heterojunction bipolar transistor, comprising:
- an emitter;
- a base contacting the emitter;
- a collector contacting the base;
- a sub-collector contacting the collector;
- a backside thermal via thermally coupled to the collector through the sub-collector, in which the backside thermal via is substantially aligned with the emitter and the base;
- and
- a thermally conductive etch stop layer lining the sub-collector and arranged between the backside thermal via and the sub-collector.
4 more elements
Dependencies are inferred from the claim text.