Method and system for in-situ etch and regrowth in gallium nitride based devices

A method of regrowing material, the method comprising:

• providing a III-nitride structure including a substrate, a first epitaxial layer coupled to the substrate, a second epitaxial layer coupled to the first epitaxial layer, and an epitaxially grown masking layer comprising AlN coupled to the second epitaxial layer;
• patterning the epitaxially grown masking layer to form an etch mask;
• placing the III-nitride structure in a growth chamber;
• removing, using an in-situ etch in the growth chamber, a portion of the III-nitride structure to expose a regrowth region;
• and
• regrowing, in the growth chamber, a regrown III-nitride material in the regrowth region and over at least a portion of the etch mask.