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US 10,319,828 B2Granted
Semiconductor device with diffusion prevention layer
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, Hisashi Saito
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Abstract
A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n(Si3N4)m (where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.
Claims9
A semiconductor device comprising:
- a semiconductor region;
- a gate electrode;
- and
- a first gate insulating film provided between the semiconductor region and the gate electrode, the first gate insulating film containing a first material having a chemical composition expressed by (SiO2)n(AlN)m (where n and m are positive integers), at least one silicon atom or one aluminum atom included in the first material being bonded with at least one oxygen atom and at least one nitrogen atom,
- wherein
- SiO2 and AlN are mixed to have an integrated structure in the first material.
3 more elements
Dependencies are inferred from the claim text.