Controlled synthesis and transfer of large area heterostructures made of bilayer and multilayer transition metal dichalocogenides
AssigneeThe Penn State Research Foundation
InventorsHumberto Terrones, Mauricio Terrones, Ana Laura Elias, Nestor Perea-Lopez
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Abstract
A TMD system in which the first layered material is made of heterobilayers or multilayers with semiconducting direct band gaps is provided. The first layered material may be made of multiple layers of different TMD with different stackings, exhibiting smaller direct and indirect band gaps smaller than monolayer systems of TMD.
Claims7
A method of making a semiconducting transition metal dichalcogenides (TMD) system comprising:
- sulfurizing or selenizing a transition metal oxide;
- and
- overlapping at least two monolayers of said sulfurized or selenized transition metal oxide.
A process for production of a monolayer semiconducting material comprising a transition metal and a chalcogenide selected from the group consisting of sulfur, tellurium, and selenium, comprising:
- depositing a transition metal oxide on a support;
- and
- subjecting said transition metal oxide to chemical vapor deposition at an elevated temperature and in the presence of gaseous selenium, gaseous tellurium, or gaseous sulfur, thereby producing a monolayer material.
Dependencies are inferred from the claim text.