Silicon carbide substrate

A silicon carbide substrate, comprising:

• a carbon-side principal surface made of a crystal surface mainly composed of a carbon surface;
• a silicon-side principal surface made of a crystal surface mainly composed of a silicon surface,
• wherein the silicon carbide substrate has a 4H crystal structure and contains nitrogen,
• wherein the silicon carbide substrate has a diameter in a range of 100 to 150 mm and a thickness in a range of 300 to 600 μm,
• wherein an off angle of the carbon-side principal surface and the silicon-side principal surface relative to a {0001} plane is smaller than or equal to 4°, and
• wherein a nitrogen concentration in the carbon-side principal surface is higher than a nitrogen concentration in the silicon-side principal surface, and a difference between a Raman peak shift of the carbon-side principal surface and a Raman peak shift of the silicon-side principal surface is smaller than or equal to 0.2 cm−1.