Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, Takashi Shinohe
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a SiC semiconductor layer, a gate electrode, a gate insulating film provided between the SiC semiconductor layer and the gate electrode, and a region that is provided between the SiC semiconductor layer and the gate insulating film and includes at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The concentration of the at least one element is equal to or greater than 1×1019 cm−3 and equal to or less than 2.4×1022 cm−3.
Claims24
A semiconductor device, comprising:
- a SiC semiconductor layer;
- a gate electrode;
- a gate insulating film provided between the SiC semiconductor layer and the gate electrode;
- and
- a region positioned at an interface between the SiC semiconductor layer and the gate insulating film, the region including a single component in which Si in SiC is replaced with at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) such that the component contacts the SiC semiconductor layer and the gate insulating film, that a concentration of the at least one element in the region is equal to or greater than 1×1019 cm−3 and equal to or less than 2.4×1022 cm−3 and that a peak of a concentration distribution of the at least one element is positioned in the region.
A method for manufacturing a semiconductor device, comprising:
- implanting ions of at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) into a SiC semiconductor layer;
- forming a thermally oxidized film on a surface of the SiC semiconductor layer;
- forming a gate insulating film on or above the surface of the SiC semiconductor layer;
- and
- forming a gate electrode on the gate insulating film,
- wherein the semiconductor device has a region positioned at an interface between the SiC semiconductor layer and the gate insulating film, the region including a single component in which Si in SiC is replaced with the at least one element such that the component contacts the SiC semiconductor layer and the gate insulating film, that a concentration of the at least one element in the region is equal to or greater than 1×1019 cm−3 and equal to or less than 2.4×1022 cm−3 and that a peak of a concentration distribution of the at least one element is positioned in the region.
A method for manufacturing a semiconductor device, comprising:
- forming a film including at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) on a surface of a SiC semiconductor layer;
- forming a gate insulating film on or above the surface of the SiC semiconductor layer;
- and
- forming a gate electrode on the gate insulating film,
- wherein the semiconductor device has a region positioned at an interface between the SiC semiconductor layer and the gate insulating film, the region including a single component in which Si in SiC is replaced with the at least one element such that the component contacts the SiC semiconductor layer and the gate insulating film, that a concentration of the at least one element in the region is equal to or greater than 1×1019 cm−3 and equal to or less than 2.4×1022 cm−3 and that a peak of a concentration distribution of the at least one element is positioned in the region.
A semiconductor device, comprising:
- a SiC semiconductor layer;
- a gate electrode;
- a gate insulating film provided between the SiC semiconductor layer and the gate electrode;
- and
- a region provided between the SiC semiconductor layer and the gate insulating film, the region including a single component in which Si in SiC is replaced with at least one element selected from the group consisting of yttrium (Y) and lanthanum (La) such that the component contacts the SiC semiconductor layer and the gate insulating film, a concentration of the at least one element in the region being equal to or greater than 1×1019 cm31 3 and equal to or less than 2.4×1022 cm−3.
Dependencies are inferred from the claim text.