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US 10,319,817 B2Granted
Lattice matched epitaxial oxide layer for a super steep retrograde well
AssigneeInternational Business Machines Corporation
InventorAlexander Reznicek
Life of this patent
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Abstract
Aspects of the present disclosure include a structure and method of making a semiconductor device. The method includes: providing a substrate, implanting a portion of the substrate to form a PTS layer, and epitaxially growing an oxide layer over the PTS layer, where the epitaxial oxide layer is selected to be lattice matched in relation to the silicon substrate.
Claims15
A semiconductor structure comprising:
- a silicon (Si) substrate;
- a first punch through stop (PTS) layer over the substrate, the PTS layer having a varying gradient in doping concentration;
- and
- an epitaxial oxide layer disposed on the PTS layer, wherein the epitaxial oxide layer is lattice matched in relation to the substrate, wherein the doping concentration in the PTS layer is highest at an interface between the PTS layer and the epitaxial oxide layer, and wherein the epitaxial oxide layer is a diffusion blocking layer with a thickness between 2 nm 10 nm in thickness a fin of a FinFET formed on the epitaxial oxide layer.
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A method for forming a semiconductor device comprising:
- providing a substrate;
- implanting a portion of the substrate to form a (punch-through stop) PTS layer, the PTS layer having a varying gradient in doping concentration;
- and
- epitaxially growing an oxide layer disposed on the PTS layer, wherein the doping concentration in the PTS layer is highest at an interface between the PTS layer and the epitaxial oxide layer, and wherein the epitaxial oxide layer is selected such that it is lattice matched in relation to the substrate and wherein a thickness of the epitaxial oxide layer is selected such that the epitaxial oxide layer i) operates as a diffusion blocking layer and ii) maintains electron and hole mobility through the semiconductor device a fin of a FinFET formed on the epitaxial oxide layer.
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Dependencies are inferred from the claim text.