Semiconductor devices including protruding insulation portions between active fins

A semiconductor device comprising:

• a channel active pattern protruding from a substrate and extending along a first direction;
• a field insulation layer disposed on the substrate, wherein the field insulation layer comprises a major surface and a protruding portion extending from the major surface;
• a source/drain region between the channel active pattern and the field insulation layer;
• a first gate disposed on the channel active pattern and extending along a second direction intersecting the first direction;
• and
• a second gate disposed on the protruding portion of the field insulation layer and extending along the second direction,
• wherein a bottom surface of the second gate is disposed below a top surface of the channel active pattern and is disposed above a bottom surface of the source/drain region, and a width of a topmost surface of the protruding portion of the field insulation layer in the first direction is substantially the same as a width of a bottom surface of the second gate in the first direction.