Semiconductor device including fin having condensed channel region

A method of fabricating a finFET device, the method comprising:

• forming, on an upper surface of a semiconductor-on-insulator (SOI) substrate, at least one semiconductor fin comprising a first semiconductor material, the at least one semiconductor fin having a channel region interposed between opposing source/drain regions;
• forming first and second opposing gate spacers that wrap around the exterior surface of the at least one fin and define a gate region that extends between the first and second gate spacers to define a total gate region length;
• forming a flowable insulator layer on the source/drain regions, and forming a dummy gate stack on the channel region;
• selectively removing the dummy gate stack with respect to the flowable insulator layer to expose the channel region;
• and
• performing a condensation process to selectively transform the entire exposed channel region into a second semiconductor material different from the first semiconductor material so as to form a condensed channel region configured to increase carrier mobility conductivity of the channel region, while maintaining the first semiconductor material of the source/drain regions, the condensation process further comprising:
• forming a condenser layer including a donor material on an external surface of the exposed channel region;
• and
• condensing the exposed channel region in response to drive the donor material from the condenser layer into the exposed channel region to convert the first semiconductor material into the second semiconductor material while converting the condenser layer into an oxidized layer comprising an insulator material,
• wherein the condenser layer is excluded from a buried insulator layer of the SOI substrate such the exposed channel area is entirely condensed with respect to the buried insulator layer, and
• wherein the condensed channel region is comprised entirely of the second semiconductor material, and wherein the second semiconductor material has a condensed channel length extending continuously across an entire upper surface of the channel region from an inner side of the first gate spacer to an inner side of the second gate spacer that matches the gate region length, and
• wherein the second semiconductor material directly contacts the first and second gate spacers, and
• wherein the source/drain regions excludes the donor material that is condensed to form the condensed channel region.