Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a gate trench portion that is provided to extend from an upper surface of the semiconductor substrate into the semiconductor substrate;
• has a longer side and a shorter side on the upper surface of the semiconductor substrate;
• and has a first gate side wall that is inside the semiconductor substrate and is along a longer side direction and a second gate side wall opposite to the first gate side wall;
• and
• a first mesa portion that is inside the semiconductor substrate and is adjacent to the first gate side wall of the gate trench portion, and a second mesa portion that is inside the semiconductor substrate and is adjacent to the second gate side wall of the gate trench portion, wherein
• first conductivity type emitter regions and second conductivity type contact regions are arranged at respective upper surfaces of the first mesa portion and the second mesa portion such that they are exposed alternately along the longer side direction of the gate trench portion, and
• at least a partial region of at least one of the emitter regions in the first mesa portions is arranged at a position facing one of the contact regions in the second mesa portions.