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AssigneesCommissariat A L'energie Atomique Et Aux Energies Alternatives, STMicroelectronics (Crolles 2) SAS
InventorsGuillaume Rodriguez, Aomar Halimaoui, Laurent Ortiz
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The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide. The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide. The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.
Electrode for a structure of Metal-Insulator-Metal type formed on a substrate by a stack successively comprising, from the substrate, an adhesion layer comprising a layer made from TiO2, a gold layer in direct contact with the adhesion layer, a barrier layer made from electrically conducting oxide in direct contact with the gold layer, and a platinum layer in direct contact with the barrier layer.
Capacitor of Metal-Insulator-Metal type comprising:
Electrode for a structure of Metal-Insulator-Metal type formed on a substrate by a stack successively comprising, from the substrate, a gold layer, a barrier layer made from RuO2 in direct contact with the gold layer and a platinum layer in direct contact with the barrier layer and wherein the barrier layer has a thickness greater than or equal to 15 nm so as to block diffusion of gold and platinum.
Dependencies are inferred from the claim text.