Memory device

A method of manufacturing a memory device, comprising:

• providing a wiring;
• forming a first insulator on the wiring;
• forming a first conductive layer extending in a first direction on the first insulator;
• forming a second conductive layer extending in the first direction on the first insulator;
• forming a first pillar electrically connected to the first conductive layer on the first conductive layer;
• forming a second pillar electrically connected to the second conductive layer on the second conductive layer;
• forming a second insulator around the first and second pillars;
• forming a hole penetrating through the first and second insulators on the wiring to expose the wiring;
• removing portions of the second insulator around the first and second pillars and around the hole;
• forming a first conductive portion including a first conductive material around the first pillar;
• forming a second conductive portion including the first conductive material around the second pillar;
• and
• forming an electrode which includes a first portion and a second portion,
• wherein the first portion is provided on the wiring and includes the second conductive material and is electrically connected to the wiring, and the second portion is provided on the first portion and includes a third conductive portion electrically connected to the first portion, includes the second conductive material, and is electrically connected to the first and second conductive portions,
• wherein the electrode is formed such that the first and second pillars are provided inside the second portion of the electrode.