Semiconductor device and method of manufacturing same
AssigneeSony Corporation
InventorTakashi Yokoyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.
Claims11
A semiconductor device comprising:
- a semiconductor substrate with a main surface side and back surface side;
- planar-type transistor on the main surface side of the semiconductor substrate with source-drain regions in the semiconductor substrate, the source-drain regions extending from the main surface side to the back surface side of the semiconductor substrate, portions of the source-drain region being silicided, the silicided portions of the source-drain regions being laterally adjacent to un-silicided portions of the source-drain regions and extending from the main surface side to the back surface side of the semiconductor substrate;
- an insultation layer on the back-surface side of the semiconductor substrate, the insulation layer having an opening therethrough to one of the source-drain regions;
- and
- a conductive connection section in the opening in the insulation layer and in contact with the one of the silicided portions of the source-drain regions.
Dependencies are inferred from the claim text.